Imaging Localized Energy States in Silicon-doped InGaN Nanowires Using 4D Electron Microscopy

Publication in ACS Energy Letters

1/23/2018


‚ÄčImaging Localized Energy States in Silicon-doped InGaN Nanowires Using 4D Electron Microscopy
R. Bose, A. Adhikari, V.M. Burlakov, G. Liu, M.A. Haque, D. Priante, M.N. Hedhili, N. Wehbe, C. Zhao, H. Yang, T.K. Ng, A. Goriely, O.M. Bakr, T. Wu, B.S. Ooi, O.F. Mohammed
ACS Energy Letters, 2018

DOI: 10.1021/acsenergylett.7b01330